A crack model for the onset of blisters using finite surface thicknesses

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In this paper, hydrogen-induced delamination of a bulk material with a finite thickness is investigated. Hydrogen implanted interface splitting is considered as the growth of the crack by forming blisters. The radius of a blister depends on the amount of the implanted hydrogen, crack surface energy, and annealing temperature. For a finite thickness of the superstrate, the evolution of the blisters is calculated adopting a smooth bell-shape function and applying the Rayleigh-Ritz method [K. K. Raju and E. V. Rao, J. Eng. Mech. 119, 626 (1993)]. The required minimum implanted gas N-min is calculated accordingly. The calculated N-min value is compared with an experimental result in literature.(c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-11
Language
English
Article Type
Article
Keywords

SILICON-ON-INSULATOR; LAYER; IMPLANTATION; TECHNOLOGY; ADHESION; WAFERS

Citation

JOURNAL OF APPLIED PHYSICS, v.100, no.9

ISSN
0021-8979
DOI
10.1063/1.2364040
URI
http://hdl.handle.net/10203/93109
Appears in Collection
CE-Journal Papers(저널논문)
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