Electrical and interfacial characterization of atomic layer deposited high-kappa gate dielectrics on GaAs for advanced CMOS devices

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In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al(2)O(3), HfO(2), and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over AL(2)O(3) or HfO(2) on GaAs, and it is attributed to the reduction of the Ga-O formation at the interfacial layer. HfAlO on p-type GaAs exhibits the best electrical properties after postdeposition annealing (PDA) at 500 degrees C. It is found that PDA, at above 500 degrees C, causes a significant amount of Ga and As out-diffusion into the high-kappa, dielectric, which degrades the interface, as well as bulk high-kappa properties.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2007-08
Language
English
Article Type
Article
Keywords

RAY-PHOTOELECTRON-SPECTROSCOPY; GA2O3-GAAS STRUCTURES; THERMAL-STABILITY; OXIDE; SUBSTRATE; MOSFETS; SI

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1831 - 1837

ISSN
0018-9383
DOI
10.1109/TED.2007.901261
URI
http://hdl.handle.net/10203/92783
Appears in Collection
EE-Journal Papers(저널논문)
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