Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell

Cited 6 time in webofscience Cited 0 time in scopus
  • Hit : 169
  • Download : 0
A rare-earth oxide, Gd(2)O(3), is evaluated for the application of the blocking layer in polysilicon-oxide-silicon nitride-oxide-silicon-type flash memory cell devices because of its high conduction-band offset and reasonably large kappa value. In a Gd(2)O(3)/Si(3)N(4)/SiO(2) dielectric stack, a monoclinic-structured Gd(2)O(3) shows the advantage of faster program/erase speed with comparable charge retention when compared to a conventional Al(2)O(3) blocking layer. Such performance makes Gd(2)O(3) a promising high-kappa material for the blocking layer in charge-trap flash memory devices. (C) 2008 The Electrochemical Society.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2008-06
Language
English
Article Type
Article
Keywords

FILMS

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.9, pp.252 - 254

ISSN
1099-0062
DOI
10.1149/1.2945877
URI
http://hdl.handle.net/10203/92737
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0