Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack

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Metal-induced gap states (MIGS) theory is applied to fully silicided (FUSI) gate for the investigation of Fermi-level pinning at the interface of FUSI gate and high-K dielectrics. Using the combination of semiempirical approach and MIGS theory, it has been found that FUSI gate has effectively MSi2 configuration at the interface with gate dielectrics. The vacuum work function values of several FUSI gates have been obtained through the analysis, and it has also been found that the Fermi-level pinning behavior of FUSI gate on high-K dielectric follows the MIGS theory well. FUSI gate on high-K dielectric shows much weaker Fermi-level pinning compared with polysilicon gate on high K dielectric which is another attractive advantage of FUSI gate process. (c) 2006 American Vacuum Society.
Publisher
A V S AMER INST PHYSICS
Issue Date
2006-05
Language
English
Article Type
Article
Keywords

METAL-GATE; WORK FUNCTION

Citation

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.24, no.3, pp.1341 - 1343

ISSN
1071-1023
DOI
10.1116/1.2198849
URI
http://hdl.handle.net/10203/92713
Appears in Collection
EE-Journal Papers(저널논문)
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