Growth of silicon nanocrystals by low-temperature photo chemical vapor deposition

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Silicon nanocrystals on a thermally grown silicon oxide have been fabricated at a low temperature using the photo chemical vapor deposition (photo-CVD). Even at a low temperature of 150 degrees C, crystalline silicon nanocrystals are successively formed by this method. By changing the gas mixture of SiH4 and H-2, the size and number density of Si nanocrystals are systematically investigated in a controlled manner. The shape, size, and crystallinity of such nanocrystals examined by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). To apply Si nanocrystals in nonvolatile memory, the capacitance-voltage (CV) characteristics of Si nanocrystals are also discussed in this paper.
Publisher
The Institute of Pure and Applied Physics
Issue Date
2006-01
Language
English
Article Type
Article
Keywords

MEMORY; SONOS; OXIDE

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.45, pp.L46 - L49

ISSN
0021-4922
DOI
10.1143/JJAP.45.L46
URI
http://hdl.handle.net/10203/92613
Appears in Collection
EE-Journal Papers(저널논문)
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