DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, HS | ko |
dc.contributor.author | Hyun, TS | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.contributor.author | Yun, TS | ko |
dc.contributor.author | Lee, JC | ko |
dc.contributor.author | Kim, Il-Doo | ko |
dc.date.accessioned | 2013-03-08T08:01:18Z | - |
dc.date.available | 2013-03-08T08:01:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-08 | - |
dc.identifier.citation | JOURNAL OF ELECTROCERAMICS, v.18, pp.305 - 309 | - |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92543 | - |
dc.description.abstract | (100) epitaxial Ba0.6Sr0.4TiO3 (BST) thin films were grown on Si substrates using a 9 nm thick SrO buffer layer. The phase shifter fabricated on BST films grown on a SrO buffered Si substrate showed a larger figure of merit (FOM) of 24.7 degrees/dB as a result of improving the phase tuning while retaining an appropriate insertion loss compared to that (15.3 degrees/dB) for the BST/MgO structure. This work demonstrates that a thin SrO buffer layer plays an important role in the successful integration of BST-based microwave tunable devices onto Si wafers. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.subject | MICROWAVE PROPERTIES | - |
dc.subject | SILICON | - |
dc.subject | HETEROSTRUCTURE | - |
dc.subject | INTEGRATION | - |
dc.subject | TA2O5 | - |
dc.title | Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers | - |
dc.type | Article | - |
dc.identifier.wosid | 000248625300018 | - |
dc.identifier.scopusid | 2-s2.0-34547702403 | - |
dc.type.rims | ART | - |
dc.citation.volume | 18 | - |
dc.citation.beginningpage | 305 | - |
dc.citation.endingpage | 309 | - |
dc.citation.publicationname | JOURNAL OF ELECTROCERAMICS | - |
dc.identifier.doi | 10.1007/s10832-007-9167-6 | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.nonIdAuthor | Kim, HS | - |
dc.contributor.nonIdAuthor | Hyun, TS | - |
dc.contributor.nonIdAuthor | Yun, TS | - |
dc.contributor.nonIdAuthor | Lee, JC | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | SrO | - |
dc.subject.keywordAuthor | BST | - |
dc.subject.keywordAuthor | phase shifter | - |
dc.subject.keywordAuthor | Si integration | - |
dc.subject.keywordAuthor | buffer layer | - |
dc.subject.keywordPlus | MICROWAVE PROPERTIES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | HETEROSTRUCTURE | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | TA2O5 | - |
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