Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers

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(100) epitaxial Ba0.6Sr0.4TiO3 (BST) thin films were grown on Si substrates using a 9 nm thick SrO buffer layer. The phase shifter fabricated on BST films grown on a SrO buffered Si substrate showed a larger figure of merit (FOM) of 24.7 degrees/dB as a result of improving the phase tuning while retaining an appropriate insertion loss compared to that (15.3 degrees/dB) for the BST/MgO structure. This work demonstrates that a thin SrO buffer layer plays an important role in the successful integration of BST-based microwave tunable devices onto Si wafers.
Publisher
SPRINGER
Issue Date
2007-08
Language
English
Article Type
Article
Keywords

MICROWAVE PROPERTIES; SILICON; HETEROSTRUCTURE; INTEGRATION; TA2O5

Citation

JOURNAL OF ELECTROCERAMICS, v.18, pp.305 - 309

ISSN
1385-3449
DOI
10.1007/s10832-007-9167-6
URI
http://hdl.handle.net/10203/92543
Appears in Collection
MS-Journal Papers(저널논문)
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