Quantum simulation of resonant tunneling in nanoscale tunnel transistors

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We have performed ballistic and diffusive quantum simulations of resonant tunneling in nanoscale tunnel transistors. We have investigated three factors, temperature, interference, and diffusive scattering, which may affect the resonant tunneling effect in the devices. Our simulations indicate that if the channel length and depth are in the order of tens of nanometers and a few nanometers, respectively, and the electron mean free path in the channel region is in the order of tens of nanometers, the current oscillations and the negative differential resistance behavior due to resonant tunneling may be observed at room temperature. (c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-03
Language
English
Article Type
Article
Citation

JOURNAL OF APPLIED PHYSICS, v.99, no.6, pp.65 - 70

ISSN
0021-8979
DOI
10.1063/1.2183348
URI
http://hdl.handle.net/10203/92187
Appears in Collection
EE-Journal Papers(저널논문)
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