Low-power high-speed performance of current-mode logic D flip-flop topology using negative-differential-resistance devices

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dc.contributor.authorKim, T.ko
dc.contributor.authorJeong, Yong-Sikko
dc.contributor.authorYang, Kyoung-Hoonko
dc.date.accessioned2013-03-08T02:52:52Z-
dc.date.available2013-03-08T02:52:52Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-04-
dc.identifier.citationIET CIRCUITS DEVICES & SYSTEMS, v.2, no.2, pp.281 - 287-
dc.identifier.issn1751-858X-
dc.identifier.urihttp://hdl.handle.net/10203/91897-
dc.description.abstractThe low-power/high-speed performance of current-mode logic (CML) D flip-flops based on negative-differential-re si stance (NDR) devices is presented. The device count used in the fabricated circuit has been significantly reduced by using the NDR-based D flip-flop topology, leading to enhanced low-power/high-speed performance. The operation of the fabricated NDR-based CML D flip-flop has been confirmed to 36 Gb/s, which is the highest speed among NDR-based differential-mode D flip-flops reported to date. The power consumption of the D flip-flop core circuit was measured to be as low as 20 mW at a power supply voltage of -3.3 V. In addition, a power-delay product of 0.55 pJ has been obtained from the NDR-based CML D flip-flop, which is the lowest value to the authors' knowledge among the previously reported D flip-flops up to operation speeds in the region of 40 Gb/s.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.subjectRESONANT-TUNNELING DIODES-
dc.subjectTECHNOLOGY-
dc.subjectFREQUENCY-
dc.subjectOPERATION-
dc.subjectELEMENT-
dc.subjectMOBILE-
dc.subjectTIME-
dc.subjectGHZ-
dc.titleLow-power high-speed performance of current-mode logic D flip-flop topology using negative-differential-resistance devices-
dc.typeArticle-
dc.identifier.wosid000255251700014-
dc.identifier.scopusid2-s2.0-42149195981-
dc.type.rimsART-
dc.citation.volume2-
dc.citation.issue2-
dc.citation.beginningpage281-
dc.citation.endingpage287-
dc.citation.publicationnameIET CIRCUITS DEVICES & SYSTEMS-
dc.identifier.doi10.1049/iet-cds:20070135-
dc.contributor.localauthorYang, Kyoung-Hoon-
dc.contributor.nonIdAuthorKim, T.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusRESONANT-TUNNELING DIODES-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusFREQUENCY-
dc.subject.keywordPlusOPERATION-
dc.subject.keywordPlusELEMENT-
dc.subject.keywordPlusMOBILE-
dc.subject.keywordPlusTIME-
dc.subject.keywordPlusGHZ-
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