Real-time label-free quantitative monitoring of biomolecules without surface binding by floating-gate complementary metal-oxide semiconductor sensor array integrated with readout circuitry

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dc.contributor.authorKim, SJko
dc.contributor.authorYoo, KTko
dc.contributor.authorShim, JYko
dc.contributor.authorChung, WSko
dc.contributor.authorKo, Cko
dc.contributor.authorIm, MSko
dc.contributor.authorKim, Lee-Supko
dc.contributor.authorYoon, ESko
dc.date.accessioned2013-03-08T01:56:29Z-
dc.date.available2013-03-08T01:56:29Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-11-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.91, pp.892 - 899-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/91778-
dc.description.abstractWe report a label-free field-effect sensing array integrated with complementary metal-oxide semiconductor (CMOS) readout circuitry to detect the surface potential determined by the negative charge in DNA molecules. For real-time DNA quantification, we have demonstrated the measurements of DNA molecules without immobilizing them on the sensing surface which is composed of an array of floating-gate CMOS transistors. This nonimmobilizing technique allows the continuous monitoring of the amount of charged molecules by injecting DNA solutions sequentially. We have carried out the real-time quantitative measurement of 19 bp oligonucleotides and analyzed its sensitivity as a function of pH in buffer solutions. (c) 2007 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectFIELD-EFFECT TRANSISTOR-
dc.subjectAMPLIFICATION-
dc.subjectDEVICE-
dc.subjectSYSTEM-
dc.titleReal-time label-free quantitative monitoring of biomolecules without surface binding by floating-gate complementary metal-oxide semiconductor sensor array integrated with readout circuitry-
dc.typeArticle-
dc.identifier.wosid000251003500126-
dc.identifier.scopusid2-s2.0-36248958621-
dc.type.rimsART-
dc.citation.volume91-
dc.citation.beginningpage892-
dc.citation.endingpage899-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2803848-
dc.contributor.localauthorKim, Lee-Sup-
dc.contributor.nonIdAuthorKim, SJ-
dc.contributor.nonIdAuthorYoo, KT-
dc.contributor.nonIdAuthorShim, JY-
dc.contributor.nonIdAuthorChung, WS-
dc.contributor.nonIdAuthorKo, C-
dc.contributor.nonIdAuthorIm, MS-
dc.contributor.nonIdAuthorYoon, ES-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTOR-
dc.subject.keywordPlusAMPLIFICATION-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordPlusSYSTEM-
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