NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications

Cited 79 time in webofscience Cited 0 time in scopus
  • Hit : 478
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorJang, WWko
dc.contributor.authorYoon, Jun-Boko
dc.contributor.authorKim, MSko
dc.contributor.authorLee, JMko
dc.contributor.authorKim, SMko
dc.contributor.authorYoon, EJko
dc.contributor.authorCho, KHko
dc.contributor.authorLee, SYko
dc.contributor.authorChoi, IHko
dc.contributor.authorKim, DWko
dc.contributor.authorPark, Dko
dc.date.accessioned2013-03-08T01:38:08Z-
dc.date.available2013-03-08T01:38:08Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-10-
dc.identifier.citationSOLID-STATE ELECTRONICS, v.52, no.10, pp.1578 - 1583-
dc.identifier.issn0038-1101-
dc.identifier.urihttp://hdl.handle.net/10203/91742-
dc.description.abstractWe developed two types of titanium nitride (TiN) based nanoelectromechanical systems (NEMS) switches with the smallest dimensions ever made by typical "top-down" complementary metaloxide-semiconductor (CMOS) fabrication technology. NEMS cantilever switch (NCLS) and NEMS clamp switch (NCS) with 30 nm-thick TiN beam and 20 nm-thick air-gap were successfully fabricated and electrically characterized. The fabricated NCLS showed ideal on/off current characteristics with an essentially zero off current, a sub-threshold slope of less than 3 mV/decade, and an on/off current ratio over 105 in air ambient. Also, the NCLS exhibited an endurance of over several hundred of switching cycles under dc and ac bias conditions in air ambient. Suspended beam memory (SBM) cell array structure was suggested for high density non-volatile memory applications. (C) 2008 Elsevier Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectCARBON-
dc.subjectTRANSISTOR-
dc.subjectNANORELAY-
dc.subjectDEVICE-
dc.subjectLIMITS-
dc.titleNEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications-
dc.typeArticle-
dc.identifier.wosid000260755900019-
dc.identifier.scopusid2-s2.0-50849092503-
dc.type.rimsART-
dc.citation.volume52-
dc.citation.issue10-
dc.citation.beginningpage1578-
dc.citation.endingpage1583-
dc.citation.publicationnameSOLID-STATE ELECTRONICS-
dc.identifier.doi10.1016/j.sse.2008.06.026-
dc.contributor.localauthorYoon, Jun-Bo-
dc.contributor.nonIdAuthorJang, WW-
dc.contributor.nonIdAuthorKim, MS-
dc.contributor.nonIdAuthorLee, JM-
dc.contributor.nonIdAuthorKim, SM-
dc.contributor.nonIdAuthorYoon, EJ-
dc.contributor.nonIdAuthorCho, KH-
dc.contributor.nonIdAuthorLee, SY-
dc.contributor.nonIdAuthorChoi, IH-
dc.contributor.nonIdAuthorKim, DW-
dc.contributor.nonIdAuthorPark, D-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorNanoelectromechanical systems (NEMS)-
dc.subject.keywordAuthorZero off current-
dc.subject.keywordAuthorAbrupt switching-
dc.subject.keywordAuthorSuspended beam memory (SBM)-
dc.subject.keywordPlusCARBON-
dc.subject.keywordPlusTRANSISTOR-
dc.subject.keywordPlusNANORELAY-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordPlusLIMITS-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 79 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0