DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rhee, HS | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2009-05-26T06:55:26Z | - |
dc.date.available | 2009-05-26T06:55:26Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-07 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.7, pp.2720 - 2724 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9156 | - |
dc.description.abstract | An epitaxial CoSi2 layer was grown on Si(100) substrate by the diffusion of Co from a cobalt-carbon film without the use of an interlayer, which is usually required between the Si and cobalt layers for the formation of epitaxial CoSi2 layers. Co-C and pure Co layers were deposited by metallorganic chemical vapor deposition using the Co precursor cyclopentadienyl dicarbonyl cobalt, Co(eta(5)-C5H5)(CO)(2), and cobalt carbonyl, Co-2(CO)(8), at 350 and 200 degrees C, respectively. The CoSi2 layer was epitaxially grown on Si(100) substrate from Co-C by ex situ rapid thermal annealing at 800 degrees C in N-2 ambient. However, the polycrystalline CoSi2 layer was formed from pure Co film under the same annealing conditions. The supply of Co to the interface by diffusion in the Co-C film seems to be lower enough than in the pure Co film, resulting in an epitaxial CoSi2 layer on Si(100) substrate. (C) 1999 The Electrochemical Society. All rights reserved. | - |
dc.description.sponsorship | The Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | SILICIDE FORMATION | - |
dc.subject | THIN-FILMS | - |
dc.subject | GROWTH | - |
dc.subject | ORIENTATION | - |
dc.subject | OMCVD | - |
dc.subject | SI | - |
dc.title | Cobalt metallorganic chemical vapor deposition and formation of epitaxial CoSi2 layer on Si(100) substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000081652700057 | - |
dc.identifier.scopusid | 2-s2.0-0032662027 | - |
dc.type.rims | ART | - |
dc.citation.volume | 146 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 2720 | - |
dc.citation.endingpage | 2724 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Rhee, HS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SILICIDE FORMATION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | OMCVD | - |
dc.subject.keywordPlus | SI | - |
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