Cobalt metallorganic chemical vapor deposition and formation of epitaxial CoSi2 layer on Si(100) substrate

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dc.contributor.authorRhee, HSko
dc.contributor.authorAhn, Byung Taeko
dc.date.accessioned2009-05-26T06:55:26Z-
dc.date.available2009-05-26T06:55:26Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-07-
dc.identifier.citationJOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.7, pp.2720 - 2724-
dc.identifier.issn0013-4651-
dc.identifier.urihttp://hdl.handle.net/10203/9156-
dc.description.abstractAn epitaxial CoSi2 layer was grown on Si(100) substrate by the diffusion of Co from a cobalt-carbon film without the use of an interlayer, which is usually required between the Si and cobalt layers for the formation of epitaxial CoSi2 layers. Co-C and pure Co layers were deposited by metallorganic chemical vapor deposition using the Co precursor cyclopentadienyl dicarbonyl cobalt, Co(eta(5)-C5H5)(CO)(2), and cobalt carbonyl, Co-2(CO)(8), at 350 and 200 degrees C, respectively. The CoSi2 layer was epitaxially grown on Si(100) substrate from Co-C by ex situ rapid thermal annealing at 800 degrees C in N-2 ambient. However, the polycrystalline CoSi2 layer was formed from pure Co film under the same annealing conditions. The supply of Co to the interface by diffusion in the Co-C film seems to be lower enough than in the pure Co film, resulting in an epitaxial CoSi2 layer on Si(100) substrate. (C) 1999 The Electrochemical Society. All rights reserved.-
dc.description.sponsorshipThe Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectSILICIDE FORMATION-
dc.subjectTHIN-FILMS-
dc.subjectGROWTH-
dc.subjectORIENTATION-
dc.subjectOMCVD-
dc.subjectSI-
dc.titleCobalt metallorganic chemical vapor deposition and formation of epitaxial CoSi2 layer on Si(100) substrate-
dc.typeArticle-
dc.identifier.wosid000081652700057-
dc.identifier.scopusid2-s2.0-0032662027-
dc.type.rimsART-
dc.citation.volume146-
dc.citation.issue7-
dc.citation.beginningpage2720-
dc.citation.endingpage2724-
dc.citation.publicationnameJOURNAL OF THE ELECTROCHEMICAL SOCIETY-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorAhn, Byung Tae-
dc.contributor.nonIdAuthorRhee, HS-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSILICIDE FORMATION-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusORIENTATION-
dc.subject.keywordPlusOMCVD-
dc.subject.keywordPlusSI-
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