Cobalt metallorganic chemical vapor deposition and formation of epitaxial CoSi2 layer on Si(100) substrate

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An epitaxial CoSi2 layer was grown on Si(100) substrate by the diffusion of Co from a cobalt-carbon film without the use of an interlayer, which is usually required between the Si and cobalt layers for the formation of epitaxial CoSi2 layers. Co-C and pure Co layers were deposited by metallorganic chemical vapor deposition using the Co precursor cyclopentadienyl dicarbonyl cobalt, Co(eta(5)-C5H5)(CO)(2), and cobalt carbonyl, Co-2(CO)(8), at 350 and 200 degrees C, respectively. The CoSi2 layer was epitaxially grown on Si(100) substrate from Co-C by ex situ rapid thermal annealing at 800 degrees C in N-2 ambient. However, the polycrystalline CoSi2 layer was formed from pure Co film under the same annealing conditions. The supply of Co to the interface by diffusion in the Co-C film seems to be lower enough than in the pure Co film, resulting in an epitaxial CoSi2 layer on Si(100) substrate. (C) 1999 The Electrochemical Society. All rights reserved.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
1999-07
Language
ENG
Article Type
Article
Keywords

SILICIDE FORMATION; THIN-FILMS; GROWTH; ORIENTATION; OMCVD; SI

Citation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.7, pp.2720 - 2724

ISSN
0013-4651
URI
http://hdl.handle.net/10203/9156
Appears in Collection
MS-Journal Papers(저널논문)
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