Effects of silicon nanostructure evolution on Er3+ luminescence in silicon-rich silicon oxide/Er-doped silica multilayers

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The effect of silicon nanostructure evolution on Er3+ luminescence is investigated by using multilayers of 2.5 nm thin SiOx (x < 2) and 10 nm thin Er-doped silica (SiO2:Er). By separating excess Si and Er atoms into separate, nanometer-thin layers, the effect of silicon nanostructure evolution on np-Si sensitized Er3+ luminescence could be investigated while keeping the microscopic Er3+ environment the same. The authors find that while the presence of np-Si is necessary for efficient sensitization, the overall quality of np-Si layer has little effect on the Er3+ luminescence. On the other hand, intrusion of np-Si into Er-doped silica layers leads to deactivation of np-Si/Er3+ interaction, suggesting that there is a limit to excess Si and Er contents that can be used. (c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-10
Language
English
Article Type
Article
Keywords

MU-M; SI NANOCRYSTALS; ENERGY-TRANSFER; SIO2-FILMS; EMISSION

Citation

APPLIED PHYSICS LETTERS, v.89, pp.G1047 - G1050

ISSN
0003-6951
DOI
10.1063/1.2364455
URI
http://hdl.handle.net/10203/91507
Appears in Collection
NT-Journal Papers(저널논문)
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