Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

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Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (C-crit) above which there is no Fermi-level pinning, and the C-crit depends on the underlying gate dielectric material also.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2005-12
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884

ISSN
0741-3106
DOI
10.1109/LED.2005.859631
URI
http://hdl.handle.net/10203/90218
Appears in Collection
EE-Journal Papers(저널논문)
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