Growing extremely thin bulklike metal film on a semiconductor surface: Monolayer Al(111) on Si(111)

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We report combined scanning tunneling microscopy, x-ray photoelectron emission spectroscopy, electron energy loss spectroscopy, and theoretical study of the growth of ultrathin Al film on the Si(111) substrate. We show that by (i) a modification of the substrate reconstruction with a root 3 x root 3 surface and (ii) a choice of materials with commensurate lattices, atomically flat film can be obtained even at the ultimate one monolayer limit, while maintaining a bulklike atomic structure. Detailed analysis shows that this monolayer Al(111)-1 x 1 film is electronically decoupled from the Si substrate, and it shows metallic characteristics. (C) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-10
Language
English
Article Type
Article
Keywords

GROWTH; OVERLAYERS; ISLANDS; PB

Citation

APPLIED PHYSICS LETTERS, v.91, no.18

ISSN
0003-6951
DOI
10.1063/1.2804010
URI
http://hdl.handle.net/10203/90213
Appears in Collection
NT-Journal Papers(저널논문)
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