Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

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We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium-metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (similar to 300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400 degrees C/600 degrees C combined with a thin (similar to 10 nm) low-temperature Si/Si0.8Ge0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to similar to 10(-7) A at -1 V bias (width/spacing: 30/2.5 mu m). Under normal incidence illumination at 1.55 mu m, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under -1 V bias is up to 6 GHz.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2008-02
Language
English
Article Type
Article
Keywords

I-N PHOTODETECTORS; SI SUBSTRATE; GE; LAYERS

Citation

IEEE ELECTRON DEVICE LETTERS, v.29, no.2, pp.161 - 164

ISSN
0741-3106
DOI
10.1109/LED.2007.914095
URI
http://hdl.handle.net/10203/90135
Appears in Collection
EE-Journal Papers(저널논문)
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