Electron mobility enhancement using ultrathin pure Ge on Si substrate

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We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2005-10
Language
English
Article Type
Article
Keywords

MOSFETS; GATE; THICKNESS

Citation

IEEE ELECTRON DEVICE LETTERS, v.26, no.10, pp.761 - 763

ISSN
0741-3106
DOI
10.1109/LED.2005.855420
URI
http://hdl.handle.net/10203/90100
Appears in Collection
EE-Journal Papers(저널논문)
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