Study on the synthesis of high quality single crystalline Si1-xGex nanowire and its transport properties

Cited 20 time in webofscience Cited 0 time in scopus
  • Hit : 220
  • Download : 0
In this wok, the authors report a synthesis of high quality single crystalline homogeneous Si1-xGex nanowires and investigate the effects of growth temperature on the microstructures, morphologies, and properties of Si1-xGex nanowires. Fabricated phosphorus-doped Si1-xGex nanowire metal-oxide-semiconductor (MOS) field effect transistor integrated with 5 nm HfO2, TaN/Ta metal gate, and Pd source/drain electrode demonstrated enhancement mode p-MOS operation with I-on/I-off similar to 10(4), subthreshold swing of similar to 136 mV/decade, and small hysteresis of 90 mV. (C) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-08
Language
English
Article Type
Article
Keywords

GERMANIUM NANOWIRES; TRANSISTORS; PLASMA

Citation

APPLIED PHYSICS LETTERS, v.91, no.7

ISSN
0003-6951
DOI
10.1063/1.2772665
URI
http://hdl.handle.net/10203/90067
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 20 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0