DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Shin, JW | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Jung, JH | ko |
dc.contributor.author | Lee, JW | ko |
dc.contributor.author | Choi, WK | ko |
dc.contributor.author | Jin, S | ko |
dc.date.accessioned | 2013-03-07T09:44:20Z | - |
dc.date.available | 2013-03-07T09:44:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.90, no.5, pp.153 - 157 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/89899 | - |
dc.description.abstract | Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO2 layer. When a ZnO thin film on a p-type Si with amorphous SiOx interface layer is subjected to a 900 degrees C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2xSi1-xO2 layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with similar to 7-10 nm diameter were formed and embedded within the SiO2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | QUANTUM-DOT | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | COULOMB-BLOCKADE | - |
dc.subject | FABRICATION | - |
dc.subject | TRANSISTORS | - |
dc.subject | MICROSCOPE | - |
dc.subject | MEMORY | - |
dc.subject | SYSTEM | - |
dc.subject | FIELD | - |
dc.title | Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer | - |
dc.type | Article | - |
dc.identifier.wosid | 000243977300035 | - |
dc.identifier.scopusid | 2-s2.0-33846981859 | - |
dc.type.rims | ART | - |
dc.citation.volume | 90 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 153 | - |
dc.citation.endingpage | 157 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2450650 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Shin, JW | - |
dc.contributor.nonIdAuthor | Jung, JH | - |
dc.contributor.nonIdAuthor | Lee, JW | - |
dc.contributor.nonIdAuthor | Choi, WK | - |
dc.contributor.nonIdAuthor | Jin, S | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | QUANTUM-DOT | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | COULOMB-BLOCKADE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MICROSCOPE | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | FIELD | - |
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