20 Gbps operation of RTD/HBT MOBILE (MOnostable BIstable Logic Element) IC based on an InP technology

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A new CML-type monostable/bistable logic element IC is fabricated using inonolithically integrated resonant tunnelling diodes (RTDs) and InP/InGaAs Heterojunction Bipolar Transistors (HBTs). The D flip-flop function of the fabricated circuit is confirmed up to 20 Gbps at room temperature. This result indicates the potential of the RTD/HBT technology for high-speed logic applications.
Publisher
IOP PUBLISHING LTD
Issue Date
2005
Language
English
Article Type
Article; Proceedings Paper
Citation

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS BOOK SERIES: INSTITUTE OF PHYSICS CONFERENCE SERIES, v.184, pp.209 - 212

ISSN
0951-3248
URI
http://hdl.handle.net/10203/89895
Appears in Collection
EE-Journal Papers(저널논문)
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