DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, CW | ko |
dc.contributor.author | Jung, MS | ko |
dc.contributor.author | Lee, Sang-Gug | ko |
dc.date.accessioned | 2013-03-07T09:38:47Z | - |
dc.date.available | 2013-03-07T09:38:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-03 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.41, pp.384 - 385 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/89892 | - |
dc.description.abstract | A two-stage ultra-wideband CMOS low noise amplifier (LNA) is proposed. The first stage is optimised for wideband input matching and low noise figure, while the second stage is optimised to extend the -3 dB bandwidth of the overall amplifier. The combination of stages can provide lower noise figure and wider bandwidth simultaneously over that of previously reported feedback-based CMOS amplifiers. The implemented LNA shows a peak gain of 13-5 dB, more than 8.5 dB of input return loss, and a noise figure of 2.5-7.4 dB over a -3 dB bandwidth from 2 to 9 GHz with DC power consumption of 25.2 mW. | - |
dc.language | English | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | Ultra-wideband CMOS low noise amplifier | - |
dc.type | Article | - |
dc.identifier.wosid | 000228749400003 | - |
dc.identifier.scopusid | 2-s2.0-17444395518 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.beginningpage | 384 | - |
dc.citation.endingpage | 385 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.identifier.doi | 10.1049/el:20058254 | - |
dc.contributor.localauthor | Lee, Sang-Gug | - |
dc.contributor.nonIdAuthor | Kim, CW | - |
dc.contributor.nonIdAuthor | Jung, MS | - |
dc.type.journalArticle | Article | - |
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