Ultra-wideband CMOS low noise amplifier

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dc.contributor.authorKim, CWko
dc.contributor.authorJung, MSko
dc.contributor.authorLee, Sang-Gugko
dc.date.accessioned2013-03-07T09:38:47Z-
dc.date.available2013-03-07T09:38:47Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-03-
dc.identifier.citationELECTRONICS LETTERS, v.41, pp.384 - 385-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/89892-
dc.description.abstractA two-stage ultra-wideband CMOS low noise amplifier (LNA) is proposed. The first stage is optimised for wideband input matching and low noise figure, while the second stage is optimised to extend the -3 dB bandwidth of the overall amplifier. The combination of stages can provide lower noise figure and wider bandwidth simultaneously over that of previously reported feedback-based CMOS amplifiers. The implemented LNA shows a peak gain of 13-5 dB, more than 8.5 dB of input return loss, and a noise figure of 2.5-7.4 dB over a -3 dB bandwidth from 2 to 9 GHz with DC power consumption of 25.2 mW.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.titleUltra-wideband CMOS low noise amplifier-
dc.typeArticle-
dc.identifier.wosid000228749400003-
dc.identifier.scopusid2-s2.0-17444395518-
dc.type.rimsART-
dc.citation.volume41-
dc.citation.beginningpage384-
dc.citation.endingpage385-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el:20058254-
dc.contributor.localauthorLee, Sang-Gug-
dc.contributor.nonIdAuthorKim, CW-
dc.contributor.nonIdAuthorJung, MS-
dc.type.journalArticleArticle-
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