Ultra-wideband CMOS low noise amplifier

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A two-stage ultra-wideband CMOS low noise amplifier (LNA) is proposed. The first stage is optimised for wideband input matching and low noise figure, while the second stage is optimised to extend the -3 dB bandwidth of the overall amplifier. The combination of stages can provide lower noise figure and wider bandwidth simultaneously over that of previously reported feedback-based CMOS amplifiers. The implemented LNA shows a peak gain of 13-5 dB, more than 8.5 dB of input return loss, and a noise figure of 2.5-7.4 dB over a -3 dB bandwidth from 2 to 9 GHz with DC power consumption of 25.2 mW.
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2005-03
Language
English
Article Type
Article
Citation

ELECTRONICS LETTERS, v.41, pp.384 - 385

ISSN
0013-5194
DOI
10.1049/el:20058254
URI
http://hdl.handle.net/10203/89892
Appears in Collection
EE-Journal Papers(저널논문)
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