Si nanocluster sensitization of Er-doped silica for optical amplet using top-pumping visible LEDs

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A review is presented of Si nanocluster sensitization of Er-doped silica for planar optical amplifiers using top-pumping 470-mn light-emitting diodes (LEDs). The motivation and basic physical principles underlying the nanocluster sensitization are first reviewed. The material structures necessary for optimum performances are presented, with emphasis on the need for nanoscale engineering of the composition and structure. Evidence of optical gain using commercial GaN-visible LEDs are presented, and the simulation results of possible device performances described. Finally, some possible future directions for research are discussed.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2006-07
Language
English
Article Type
Article
Keywords

CHEMICAL-VAPOR-DEPOSITION; WAVE-GUIDE AMPLIFIER; RARE-EARTH IONS; MU-M; ENERGY-TRANSFER; EXCITATION SPECTROSCOPY; SI/SIO2 SUPERLATTICES; CRYSTALLINE SILICON; POROUS SILICON; LIGHT EMISSION

Citation

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.12, pp.783 - 796

ISSN
1077-260X
DOI
10.1109/JSTQE.2006.876160
URI
http://hdl.handle.net/10203/89833
Appears in Collection
NT-Journal Papers(저널논문)
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