Initial stages of ruthenium film growth in plasma-enhanced atomic layer deposition

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The initial stages of ruthenium film growth in plasma-enhanced atomic layer deposition (PEALD) on titanium nitride (TiN) substrate were investigated in detail. During the initial stages of ruthenium film growth, the influence of the substrate surface was significant and controlling thickness by counting the number of deposition cycles is no longer valid. The time required for saturated adsorption of Ru(EtCp)(2) as well as the amount of deposited ruthenium atoms per cycle changed during the initial stage. The time required for saturated adsorption of Ru(EtCp)(2) on homogeneous ruthenium surfaces was 7 s. However, it increased up to 25 s during the initial stage of the ruthenium film growth where the film growth on heterogeneous TiN substrate is dominant. By considering these changes during the initial stages of ruthenium PEALD growth, the full coverage of PEALD ruthenium can be obtained at a minimum thickness of 2.7 nm. (C) 2008 The Electrochemical Society.
Publisher
Electrochemical Soc Inc
Issue Date
2008-03
Language
English
Article Type
Article
Keywords

THIN-FILMS; COPPER; METALLIZATION; SIO2

Citation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.5, pp.H296 - H300

ISSN
0013-4651
DOI
10.1149/1.2868779
URI
http://hdl.handle.net/10203/89763
Appears in Collection
MS-Journal Papers(저널논문)
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