Improvement of morphological stability of PEALD-iridium thin films by adopting two-step annealing process

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Plasma-enhanced atomic layer deposition (PEALD) of iridium (Ir) films was investigated using Ir(EtCp)(COD) and NH(3) plasma. Deposited Ir films had smooth surface and preferred (111) orientation. After simple annealing in ambient oxygen, surface roughening occurred because Ir was oxidized above 550 degrees C, and the oxidized IrO(2) during temperature rising was reduced to Ir at 850 degrees C. However, by adopting two-step annealing, Ir films showed excellent thermal and morphological stability at 850 degrees C. During two-step annealing at 850 degrees C, the oxidation during temperature rising was suppressed by supplying argon, and annealing in ambient oxygen progressed after the temperature reached 850 degrees C. (C) 2008 The Electrochemical Society.
Publisher
Electrochemical Soc Inc
Issue Date
2008-09
Language
English
Article Type
Article
Keywords

ATOMIC LAYER DEPOSITION; IR ELECTRODES; CAPACITORS; GROWTH; TA2O5; RU

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.11, pp.H303 - H305

ISSN
1099-0062
DOI
10.1149/1.2973336
URI
http://hdl.handle.net/10203/89661
Appears in Collection
MS-Journal Papers(저널논문)
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