Three-dimensional quantum simulation of multigate nanowire field effect transistors

Cited 8 time in webofscience Cited 0 time in scopus
  • Hit : 152
  • Download : 0
Detailed numerical methods for the three-dimensional quantum simulation of the multigate nanowire field effect transistors in the ballistic transport regime are presented in this work. The device has been modeled based on the effective mass theory and the non-equilibrium Green's function formalism, and its simulation consists of solutions of the three-dimensional Poisson's equation, two-dimensional Schrodinger equations on the cross-sectional planes, and one-dimensional transport equation. Details on numerical techniques for each of the simulation steps are described, with a special attention to the solution of the most CPU demanding two-dimensional Schrodinger equation. (C) 2007 IMACS. Published by Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2008-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

MOSFETS

Citation

MATHEMATICS AND COMPUTERS IN SIMULATION, v.79, no.4, pp.1060 - 1070

ISSN
0378-4754
DOI
10.1016/j.matcom.2007.10.007
URI
http://hdl.handle.net/10203/89438
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 8 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0