Radiation effect test for single-crystalline and polycrystalline silicon solar cells

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dc.contributor.authorShin, Goo-Hwanko
dc.contributor.authorRyu, Kwang-Sunko
dc.contributor.authorKim, Hyung-Myungko
dc.contributor.authorMin, KyoungWookko
dc.date.accessioned2013-03-07T01:56:04Z-
dc.date.available2013-03-07T01:56:04Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-03-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, pp.843 - 847-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/89159-
dc.description.abstractThe effects of cyclotron proton beam accelerator radiation on single-crystalline and polycrystalline silicon cells have been investigated. The maximum allowable output powers of exposed single-crystalline and polycrystalline silicon solar cells were decreased by 35% and 30%, respectively, as compared with non-exposed solar cells. The effects of proton energies of 10.7 MeV and 20.3 MeV and fluences of 2.28 x 10(11)/cm(2) and 3.24 x 10(11)/cm(2) at the solar cells are also included and discussed.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.titleRadiation effect test for single-crystalline and polycrystalline silicon solar cells-
dc.typeArticle-
dc.identifier.wosid000254057700029-
dc.identifier.scopusid2-s2.0-41949125017-
dc.type.rimsART-
dc.citation.volume52-
dc.citation.beginningpage843-
dc.citation.endingpage847-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorShin, Goo-Hwan-
dc.contributor.localauthorKim, Hyung-Myung-
dc.contributor.localauthorMin, KyoungWook-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcyclotron beam accelerator-
dc.subject.keywordAuthorsingle-crystalline and polycrystalline silicon solar cell-
dc.subject.keywordAuthorphotovoltaic effect-
dc.subject.keywordAuthorband gap-
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