Realization ofFBAR Devices for Broadband WiMAX Applications

Abstract

Effects of addition of Cr adhesion layer to W/SiO2 multilayer Bragg reflectors on the resonance characteristics of film bulk acoustic resonator (FBAR) devices are presented. Main resonance peaks could be significantly moved to higher frequency mainly due to the addition of Cr adhesion layer to multilayer Bragg reflectors and control of the bottom electrode thickness as well. The FBAR devices with Cr adhesion layer in Bragg reflectors could result in more improved resonance characteristics at about ~ 3 GHz in terms of return loss and Q-factor