Intensity noise in a wavelength-locked Fabry-Perot laser diode to a spectrum sliced ASE

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dc.contributor.authorPark, KYko
dc.contributor.authorLee, Chang-Heeko
dc.date.accessioned2013-03-07T01:15:00Z-
dc.date.available2013-03-07T01:15:00Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-03-
dc.identifier.citationIEEE JOURNAL OF QUANTUM ELECTRONICS, v.44, no.3, pp.209 - 215-
dc.identifier.issn0018-9197-
dc.identifier.urihttp://hdl.handle.net/10203/89045-
dc.description.abstractWe derived analytic expression for the relative intensity noise (RIN) of a wavelength-locked Fabry-Perot laser diode (FP LD) in a single mode region. The RIN of the wavelength-locked output is a function of the photon density and the photon life time. It also depends on the wavelength detuning and the injected amplified spontaneous emission (ASE) power. We investigated the modulation transfer function of the wavelength-locked FP LD and its dependence on wavelength detuning. The analytic result has good agreement with the simulation result.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectWDM-PON-
dc.subjectSEMICONDUCTOR-LASER-
dc.subjectRANGE-
dc.titleIntensity noise in a wavelength-locked Fabry-Perot laser diode to a spectrum sliced ASE-
dc.typeArticle-
dc.identifier.wosid000254937300002-
dc.identifier.scopusid2-s2.0-40449136152-
dc.type.rimsART-
dc.citation.volume44-
dc.citation.issue3-
dc.citation.beginningpage209-
dc.citation.endingpage215-
dc.citation.publicationnameIEEE JOURNAL OF QUANTUM ELECTRONICS-
dc.contributor.localauthorLee, Chang-Hee-
dc.contributor.nonIdAuthorPark, KY-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorincoherent light injection-
dc.subject.keywordAuthorspectrum sliced ASE-
dc.subject.keywordAuthorwavelength-division multiplexed passive optical network (WDM-PON)-
dc.subject.keywordAuthorwavelength-locked Fabry-Perot laser diode-
dc.subject.keywordPlusWDM-PON-
dc.subject.keywordPlusSEMICONDUCTOR-LASER-
dc.subject.keywordPlusRANGE-
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