High-speed subcarrier based on high-resistivity silicon for long-wavelength VCSEL array

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dc.contributor.authorHwang, SHko
dc.contributor.authorPark, HyoHoonko
dc.contributor.authorChoi, JHko
dc.contributor.authorRho, BSko
dc.date.accessioned2013-03-07T00:19:14Z-
dc.date.available2013-03-07T00:19:14Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-11-
dc.identifier.citationIEEE PHOTONICS TECHNOLOGY LETTERS, v.18, no.21-24, pp.2523 - 2525-
dc.identifier.issn1041-1135-
dc.identifier.urihttp://hdl.handle.net/10203/88920-
dc.description.abstractWe propose a chip-to-chip optical interconnection using a silicon (Si) subcarrier integrated with a long-wavelength vertical-cavity surface-emitting laser (LW-VCSEL) array. As the basic study of that, we examined the microwave and optical characteristics of the Si subcarrier. Finally, a demonstrator that mounted the four channels and 1550-nm LW-VCSEL array on the subcarrier has been shown with no kink L-I curves and with clear 2.5-Gb/s eye diagrams.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleHigh-speed subcarrier based on high-resistivity silicon for long-wavelength VCSEL array-
dc.typeArticle-
dc.identifier.wosid000243173300110-
dc.identifier.scopusid2-s2.0-33947278385-
dc.type.rimsART-
dc.citation.volume18-
dc.citation.issue21-24-
dc.citation.beginningpage2523-
dc.citation.endingpage2525-
dc.citation.publicationnameIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.identifier.doi10.1109/LPT.2006.887339-
dc.contributor.localauthorPark, HyoHoon-
dc.contributor.nonIdAuthorHwang, SH-
dc.contributor.nonIdAuthorChoi, JH-
dc.contributor.nonIdAuthorRho, BS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorchip-to-chip optical interconnection-
dc.subject.keywordAuthorcoplanar waveguide-
dc.subject.keywordAuthorhigh-resistivity silicon subcarrier-
dc.subject.keywordAuthorlong-wavelength vertical-cavity surface-emitting laser-
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EE-Journal Papers(저널논문)
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