Quantum simulation of coaxially gated CNTFETs by using an effective mass approach

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Carbon nanotube field-effect transistors (CNTFETs) with a cylindrical surrounding gate and Schottky-barrier contacts to the source and drain are investigated by solving the self-consistent two-dimensional Poisson equation with the non-equilibrium Green's function equations. A simple effective-mass approach has been taken to deal with the transport problem in the CNTFETs, which, nonetheless, yields device characteristics that are in good agreement with those obtained by using more complex atomistic simulations. The low on/off current ratios due to the presence of both electron and hole conductions in the off-state region are improved by separately controlling the carrier injections at the source and drain contacts: CNTFETs with the CNT channel partially gated toward the source and those with the CNT channel partially n-doped toward the drain have been considered, and improvements in the on/off ratios of up to five orders of magnitude have been obtained.
Publisher
KOREAN PHYSICAL SOC
Issue Date
2007-06
Language
English
Article Type
Article; Proceedings Paper
Keywords

CARBON NANOTUBE TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; PERFORMANCE; MOSFETS

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1887 - 1893

ISSN
0374-4884
URI
http://hdl.handle.net/10203/88727
Appears in Collection
EE-Journal Papers(저널논문)
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