High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

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High-performance pentacene field-effect transistors have been fabricated using Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD). Hole mobility values of 1.5 +/- 0.2 cm(2)/V s and 0.9 +/- 0.1 cm(2)/V s were obtained when using heavily n-doped silicon (n(+)-Si) and ITO-coated glass as gate electrodes, respectively. These transistors were operated in enhancement mode with a zero turn-on voltage and exhibited a low threshold voltage (< -10V) as well as a low sub-threshold slope (< 1 V/decade) and an on/off current ratio larger than 10(6). Atomic force microscopy (AFM) images of pentacene films on Al2O3 treated with octadecyltrichlorosilane (OTS) revealed well-ordered island formation, and X-ray diffraction patterns showed characteristics of a "thin film" phase. Low surface trap density and high capacitance density of Al2O3 gate insulators also contributed to the high performance of pentacene field-effect transistors. (c) 2007 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2007-12
Language
English
Article Type
Article
Keywords

SELF-ASSEMBLED MONOLAYERS; THIN-FILM-TRANSISTOR; ORGANIC TRANSISTORS; INSULATORS; DEVICES; CHEMISTRY; ROUGHNESS; PROGRESS; GROWTH

Citation

ORGANIC ELECTRONICS, v.8, no.6, pp.718 - 726

ISSN
1566-1199
DOI
10.1016/j.orgel.2007.06.009
URI
http://hdl.handle.net/10203/88693
Appears in Collection
EE-Journal Papers(저널논문)
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