Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism

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We report the mechanism of dopant-segregation (DS) technique as applied in metal-germanium-metal photodetectors (MGM-PDs) for dark current suppression. Photodetectors with various dopant-segregation strategies were designed, fabricated, and characterized. Results show that asymmetric MGM-PD, with n- and p-type dopants segregated separately in two NiGe electrodes, is the optimized scheme in terms of dark current and responsivity. It shows a dark current of 10(-6) A at -1 V, which is two to three orders of magnitude lower than that of MGM-PD without DS. n-type dopant (As) segregation in NiGe barrier increases the hole Schottky barrier height to 0.5 eV and, thus, plays a crucial role in dark current suppression. (C) 2008 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2008-02
Language
English
Article Type
Article
Keywords

SI

Citation

APPLIED PHYSICS LETTERS, v.92, no.5

ISSN
0003-6951
DOI
10.1063/1.2841061
URI
http://hdl.handle.net/10203/88482
Appears in Collection
EE-Journal Papers(저널논문)
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