Dielectric Properties of β-SiAlON at High Temperature Using Perturbation Method

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β-SiAlON with various z-values (z = 0.5-4.0) were produced by hot pressing. The dielectric properties (dielectric constant and tangent loss) of β-SiAlON were characterized by the post-resonator method at room temperature and by the perturbation method from room temperature to 1200 °C at 2.45 GHz, respectively. Effect of z-values and temperatures with β-SiAlON were investigated.
Publisher
Trans Tech Publications Ltd.
Issue Date
2008-12
Language
English
Citation

KEY ENGINEERING MATERIALS, v.403, no.0, pp.121 - 123

ISSN
1013-9826
URI
http://hdl.handle.net/10203/87872
Appears in Collection
MS-Journal Papers(저널논문)
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