DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jacho | ko |
dc.contributor.author | Cha, Jung-Ho | ko |
dc.contributor.author | Kwon, Young Se | ko |
dc.date.accessioned | 2013-03-06T17:05:50Z | - |
dc.date.available | 2013-03-06T17:05:50Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.45, no.11, pp.8648 - 8649 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87713 | - |
dc.description.abstract | The use of silicon nitride with a two-level temperature technique is proposed for the passivation of InP-based devices. InGaAsP/InP light-emitting diodes (LEDs) were fabricated by this passivation technique. The reverse current was decreased by about two orders of magnitude, and light-current linearity at a low current was improved. | - |
dc.language | English | - |
dc.publisher | Japan Soc Applied Physics | - |
dc.title | Silicon nitride two-level-temperature passivation on InP/InGaAsP light-emitting diodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000242323200022 | - |
dc.identifier.scopusid | 2-s2.0-34547889943 | - |
dc.type.rims | ART | - |
dc.citation.volume | 45 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 8648 | - |
dc.citation.endingpage | 8649 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1143/JJAP.45.8648 | - |
dc.contributor.localauthor | Kwon, Young Se | - |
dc.contributor.nonIdAuthor | Kim, Jacho | - |
dc.contributor.nonIdAuthor | Cha, Jung-Ho | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | passivation | - |
dc.subject.keywordAuthor | silicon nitride | - |
dc.subject.keywordAuthor | two-level temperature | - |
dc.subject.keywordAuthor | indium phosphide | - |
dc.subject.keywordAuthor | InGaAsP | - |
dc.subject.keywordAuthor | light-emitting diodes | - |
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