Silicon nitride two-level-temperature passivation on InP/InGaAsP light-emitting diodes

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dc.contributor.authorKim, Jachoko
dc.contributor.authorCha, Jung-Hoko
dc.contributor.authorKwon, Young Seko
dc.date.accessioned2013-03-06T17:05:50Z-
dc.date.available2013-03-06T17:05:50Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v.45, no.11, pp.8648 - 8649-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/87713-
dc.description.abstractThe use of silicon nitride with a two-level temperature technique is proposed for the passivation of InP-based devices. InGaAsP/InP light-emitting diodes (LEDs) were fabricated by this passivation technique. The reverse current was decreased by about two orders of magnitude, and light-current linearity at a low current was improved.-
dc.languageEnglish-
dc.publisherJapan Soc Applied Physics-
dc.titleSilicon nitride two-level-temperature passivation on InP/InGaAsP light-emitting diodes-
dc.typeArticle-
dc.identifier.wosid000242323200022-
dc.identifier.scopusid2-s2.0-34547889943-
dc.type.rimsART-
dc.citation.volume45-
dc.citation.issue11-
dc.citation.beginningpage8648-
dc.citation.endingpage8649-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1143/JJAP.45.8648-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.nonIdAuthorKim, Jacho-
dc.contributor.nonIdAuthorCha, Jung-Ho-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorpassivation-
dc.subject.keywordAuthorsilicon nitride-
dc.subject.keywordAuthortwo-level temperature-
dc.subject.keywordAuthorindium phosphide-
dc.subject.keywordAuthorInGaAsP-
dc.subject.keywordAuthorlight-emitting diodes-
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