Defects in interfacial layers and their role in the growth of ZnO nanorods by metallorganic chemical vapor deposition

We report the evolution of ZnO nanorods by metalorganic chemical vapor deposition on sapphire substrates and an investigation of their microstructure. Well-aligned ZnO nanorods with a high aspect ratio were grown on an interfacial layer with several types of defects at a lower reactor pressure. Planar defects such as stacking mismatch boundaries and inversion domain boundaries were formed in the interfacial layer during the coalescence of the islands, and finally constituted the side facets of the nanorods. Based on the microstructural changes and origin of the defects in the interfacial layers, we propose a model to explain the growth evolution of ZnO nanorods on sapphire substrates. (c) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-10
Language
ENG
Keywords

0001 SAPPHIRE; GAN LAYERS; NANOWIRES; NANOTUBES

Citation

APPLIED PHYSICS LETTERS, v.91, pp.309 - 321

ISSN
0003-6951
DOI
10.1063/1.2794418
URI
http://hdl.handle.net/10203/87501
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
000249974100105.pdf(466.45 kB)Download
  • Hit : 192
  • Download : 148
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 19 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0