DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Hoon Jung | ko |
dc.contributor.author | Choi, Kyu Jin | ko |
dc.contributor.author | Loh, Wei Yip | ko |
dc.contributor.author | Htoo, Thwin | ko |
dc.contributor.author | Chua, Soo Jin | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-06T12:43:27Z | - |
dc.date.available | 2013-03-06T12:43:27Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-09 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.102, no.5 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87011 | - |
dc.description.abstract | A GaAs defect-free epitaxial layer has been grown on Si via a Ge concentration graded SiGe on insulator (SGOI) for application in high channel-mobility metal-oxide-semiconductor field effect transistor. The SGOI layer, 42 nm thick, serves as the compliant and intermediate buffer to reduce the lattice and thermal expansion mismatches between Si and GaAs. A modified two-step Ge condensation technique achieves the surface Ge concentration in SGOI as high as 71%. It is also found that low-temperature migration enhanced epitaxy during the initial GaAs nucleation on the SGOI surface is critical to obtain a device quality GaAs layer by epitaxial growth. (C) 2007 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | INSULATOR | - |
dc.subject | OXIDATION | - |
dc.subject | GERMANIUM | - |
dc.subject | QUALITY | - |
dc.subject | SILICON | - |
dc.title | Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques | - |
dc.type | Article | - |
dc.identifier.wosid | 000249474100074 | - |
dc.identifier.scopusid | 2-s2.0-34548606495 | - |
dc.type.rims | ART | - |
dc.citation.volume | 102 | - |
dc.citation.issue | 5 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.2777401 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Oh, Hoon Jung | - |
dc.contributor.nonIdAuthor | Choi, Kyu Jin | - |
dc.contributor.nonIdAuthor | Loh, Wei Yip | - |
dc.contributor.nonIdAuthor | Htoo, Thwin | - |
dc.contributor.nonIdAuthor | Chua, Soo Jin | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | INSULATOR | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | QUALITY | - |
dc.subject.keywordPlus | SILICON | - |
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