Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

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dc.contributor.authorOh, Hoon Jungko
dc.contributor.authorChoi, Kyu Jinko
dc.contributor.authorLoh, Wei Yipko
dc.contributor.authorHtoo, Thwinko
dc.contributor.authorChua, Soo Jinko
dc.contributor.authorCho, Byung Jinko
dc.date.accessioned2013-03-06T12:43:27Z-
dc.date.available2013-03-06T12:43:27Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-09-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.102, no.5-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/87011-
dc.description.abstractA GaAs defect-free epitaxial layer has been grown on Si via a Ge concentration graded SiGe on insulator (SGOI) for application in high channel-mobility metal-oxide-semiconductor field effect transistor. The SGOI layer, 42 nm thick, serves as the compliant and intermediate buffer to reduce the lattice and thermal expansion mismatches between Si and GaAs. A modified two-step Ge condensation technique achieves the surface Ge concentration in SGOI as high as 71%. It is also found that low-temperature migration enhanced epitaxy during the initial GaAs nucleation on the SGOI surface is critical to obtain a device quality GaAs layer by epitaxial growth. (C) 2007 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectINSULATOR-
dc.subjectOXIDATION-
dc.subjectGERMANIUM-
dc.subjectQUALITY-
dc.subjectSILICON-
dc.titleIntegration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques-
dc.typeArticle-
dc.identifier.wosid000249474100074-
dc.identifier.scopusid2-s2.0-34548606495-
dc.type.rimsART-
dc.citation.volume102-
dc.citation.issue5-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.2777401-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorOh, Hoon Jung-
dc.contributor.nonIdAuthorChoi, Kyu Jin-
dc.contributor.nonIdAuthorLoh, Wei Yip-
dc.contributor.nonIdAuthorHtoo, Thwin-
dc.contributor.nonIdAuthorChua, Soo Jin-
dc.type.journalArticleArticle-
dc.subject.keywordPlusINSULATOR-
dc.subject.keywordPlusOXIDATION-
dc.subject.keywordPlusGERMANIUM-
dc.subject.keywordPlusQUALITY-
dc.subject.keywordPlusSILICON-
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