Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

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A GaAs defect-free epitaxial layer has been grown on Si via a Ge concentration graded SiGe on insulator (SGOI) for application in high channel-mobility metal-oxide-semiconductor field effect transistor. The SGOI layer, 42 nm thick, serves as the compliant and intermediate buffer to reduce the lattice and thermal expansion mismatches between Si and GaAs. A modified two-step Ge condensation technique achieves the surface Ge concentration in SGOI as high as 71%. It is also found that low-temperature migration enhanced epitaxy during the initial GaAs nucleation on the SGOI surface is critical to obtain a device quality GaAs layer by epitaxial growth. (C) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-09
Language
English
Article Type
Article
Keywords

INSULATOR; OXIDATION; GERMANIUM; QUALITY; SILICON

Citation

JOURNAL OF APPLIED PHYSICS, v.102, no.5

ISSN
0021-8979
DOI
10.1063/1.2777401
URI
http://hdl.handle.net/10203/87011
Appears in Collection
EE-Journal Papers(저널논문)
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