Cmos power cell with improved junction breakdown using interdigitated body contact

Abstract

A power-cell for RF power applications is designed using 0.35-mu m standard CMOS technology. An interdigitated body contact method is proposed and applied to a RF power-cell. A total gate width of the designed power-cell is 3.2 nun. The proposed RF power-cell has a higherjunction breakdown voltage than that of a conventional RF power-cell. The breakdown voltage of the proposed CMOS power-cell at zero gale voltage was,found to be similar to 8 V. (c) 2007 Wiley Periodicals, Inc.