DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yeo, CC | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Lee, MH | ko |
dc.contributor.author | Liu, CW | ko |
dc.contributor.author | Choi, KJ | ko |
dc.contributor.author | Lee, TW | ko |
dc.date.accessioned | 2013-03-06T10:11:28Z | - |
dc.date.available | 2013-03-06T10:11:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-05 | - |
dc.identifier.citation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10203/86651 | - |
dc.description.abstract | The thermal stabilities of MOSFETs with high-K gate dielectric on both Si/ultrathin Ge/Si (SGS) and strained Si on relaxed Si1-xGex (SS) substrates are studied. Though an initial drivability enhancement of 29% is shown for the SGS nMOSFET, annealing at 750 degrees C has resulted in drastic degradation in its drivability, lowering its Id beyond that of the Si nMOSFETs by 52%. Despite lowering in the junction leakage current, Ge diffusion to the near surface region, indicated by V-th and surface roughness change, degrades the SGS device performance significantly. For the SS nMOSFET, drivability varies with Ge content, whereby a maximum of 86% improvement over that of the Si nMOSFET is observed for 30% Ge. In contrast to the SGS nMOSFET, the SS nMOSFET is able to retain its Id improvement, even after annealing at 950 degrees C, as the in-plane tensile strain is preserved. Ge diffusion to the surface does not affect the device significantly, as the strained Si thickness is about 10 nm compared to a Si cap thickness of only 1.5 nm for the SGS substrate. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | ELECTRON-MOBILITY | - |
dc.subject | MOSFETS | - |
dc.title | Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric | - |
dc.type | Article | - |
dc.identifier.wosid | 000237885000019 | - |
dc.identifier.scopusid | 2-s2.0-33645686127 | - |
dc.type.rims | ART | - |
dc.citation.volume | 21 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 665 | - |
dc.citation.endingpage | 669 | - |
dc.citation.publicationname | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.identifier.doi | 10.1088/0268-1242/21/5/017 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Yeo, CC | - |
dc.contributor.nonIdAuthor | Lee, MH | - |
dc.contributor.nonIdAuthor | Liu, CW | - |
dc.contributor.nonIdAuthor | Choi, KJ | - |
dc.contributor.nonIdAuthor | Lee, TW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY | - |
dc.subject.keywordPlus | MOSFETS | - |
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