Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric

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The thermal stabilities of MOSFETs with high-K gate dielectric on both Si/ultrathin Ge/Si (SGS) and strained Si on relaxed Si1-xGex (SS) substrates are studied. Though an initial drivability enhancement of 29% is shown for the SGS nMOSFET, annealing at 750 degrees C has resulted in drastic degradation in its drivability, lowering its Id beyond that of the Si nMOSFETs by 52%. Despite lowering in the junction leakage current, Ge diffusion to the near surface region, indicated by V-th and surface roughness change, degrades the SGS device performance significantly. For the SS nMOSFET, drivability varies with Ge content, whereby a maximum of 86% improvement over that of the Si nMOSFET is observed for 30% Ge. In contrast to the SGS nMOSFET, the SS nMOSFET is able to retain its Id improvement, even after annealing at 950 degrees C, as the in-plane tensile strain is preserved. Ge diffusion to the surface does not affect the device significantly, as the strained Si thickness is about 10 nm compared to a Si cap thickness of only 1.5 nm for the SGS substrate.
Publisher
IOP PUBLISHING LTD
Issue Date
2006-05
Language
English
Article Type
Article
Keywords

ELECTRON-MOBILITY; MOSFETS

Citation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669

ISSN
0268-1242
DOI
10.1088/0268-1242/21/5/017
URI
http://hdl.handle.net/10203/86651
Appears in Collection
EE-Journal Papers(저널논문)
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