Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions

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The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 mu m from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film. (c) 2007 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2007-11
Language
English
Article Type
Article
Keywords

1.5 MU-M; AL2O3 FILMS; ENERGY-TRANSFER; PHOTOLUMINESCENCE; LUMINESCENCE; POWDERS

Citation

OPTICAL MATERIALS, v.30, pp.497 - 501

ISSN
0925-3467
DOI
10.1016/j.optmat.2006.12.016
URI
http://hdl.handle.net/10203/86498
Appears in Collection
NT-Journal Papers(저널논문)
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