Low frequency and microwave performances of Ba0.6Sr0.4TiO3 films on atomic layer deposited TiO2/high resistivity Si substrates

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We report on high tunablity of Ba0.6Sr0.4TiO3 (BST) thin films realized through the use of atomic layer deposited TiO2 films as a microwave buffer layer between BST and a high resistivity (HR) Si substrate. Coplanar waveguide (CPW) meander-line phase shifters using BST/TiO2/HR-Si and BST/MgO structures exhibited a differential phase shift of 95 degrees and 24.4 degrees, respectively, at 15 GHz under an electric field of 10 kV/cm. The figure of merit of the phase shifters at 15 GHz was 30.6 degrees/dB for BST film grown on a TiO2/HR-Si substrate and 12.2 degrees/dB for BST film grown on a MgO single crystal substrate. These results constitute significant progress in integrating BST films with conventional silicon technology.
Publisher
SPRINGER
Issue Date
2006-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

THIN-FILMS; TA2O5

Citation

JOURNAL OF ELECTROCERAMICS, v.17, pp.421 - 425

ISSN
1385-3449
DOI
10.1007/s10832-006-9336-z
URI
http://hdl.handle.net/10203/86442
Appears in Collection
MS-Journal Papers(저널논문)
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