Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

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dc.contributor.authorAgnihotri, OPko
dc.contributor.authorPal, Rko
dc.contributor.authorYang, KDko
dc.contributor.authorBae, SHko
dc.contributor.authorLee, SJko
dc.contributor.authorLee, MYko
dc.contributor.authorChoi, WSko
dc.contributor.authorChoi, JHko
dc.contributor.authorLee, Hee Chulko
dc.contributor.authorKato, Iko
dc.date.accessioned2013-03-05T04:25:35Z-
dc.date.available2013-03-05T04:25:35Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-07-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.7A, pp.4500 - 4502-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/85481-
dc.description.abstractUltraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.subjectPLASMA HYDROGENATION-
dc.subjectHGCDTE-
dc.subjectDETECTORS-
dc.subjectPASSIVATION-
dc.subjectTECHNOLOGY-
dc.titleUltraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment-
dc.typeArticle-
dc.identifier.wosid000177512200016-
dc.identifier.scopusid2-s2.0-0036656342-
dc.type.rimsART-
dc.citation.volume41-
dc.citation.issue7A-
dc.citation.beginningpage4500-
dc.citation.endingpage4502-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorAgnihotri, OP-
dc.contributor.nonIdAuthorPal, R-
dc.contributor.nonIdAuthorYang, KD-
dc.contributor.nonIdAuthorBae, SH-
dc.contributor.nonIdAuthorLee, SJ-
dc.contributor.nonIdAuthorLee, MY-
dc.contributor.nonIdAuthorChoi, WS-
dc.contributor.nonIdAuthorChoi, JH-
dc.contributor.nonIdAuthorKato, I-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorn-Hg0.8Cd0.2Te-
dc.subject.keywordAuthorCdTe/n-Hg0.8Cd0.2Te-
dc.subject.keywordAuthorsurface and interface modifications-
dc.subject.keywordPlusPLASMA HYDROGENATION-
dc.subject.keywordPlusHGCDTE-
dc.subject.keywordPlusDETECTORS-
dc.subject.keywordPlusPASSIVATION-
dc.subject.keywordPlusTECHNOLOGY-
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