Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory

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Metal-ferroelectric-insulator-semiconductor (MFIS) structures including an Al2O3 insulator layer and a SET ferroelectric film are fabricated with their optimum thicknesses extracted by computer simulation, and then electrical properties of MFIS structures are investigated. In Pt/Al2O3/Si structure, no hysteresis and low leakage current of 7.5x10(-9)A/cm(2) have been observed. The MRS structure, Pt/SBT/Al2O3/Si, shows a memory window width of 1.2 V at an operation voltage of 5 V and a gate leakage current density of 7x10(-8)A/cm(2) at 1 V. Fatigue characteristics of the MFIS structure are also studied.
Publisher
GORDON BREACH SCI PUBL LTD
Issue Date
2001
Language
English
Article Type
Article; Proceedings Paper
Keywords

FILMS

Citation

INTEGRATED FERROELECTRICS, v.34, no.1-4, pp.1553 - 1560

ISSN
1058-4587
URI
http://hdl.handle.net/10203/85407
Appears in Collection
EE-Journal Papers(저널논문)
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