MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2

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We demonstrate a top-surface aluminized and nitrided HfO2 gate dielectric using a synthesis of ultrathin aluminum nitride (AIN) and HfO2. The reaction of AIN with HfO2 through a subsequent high-temperature annealing incorporates and N into an HfO2 layer, which results in a synthesis of HfAION near the top surface of HfO2, forming an HfAlON-HfO2 stack structure. This approach suppresses interfacial layer growth and improves thermal stability of the dielectric, resulting in significant improvement in leakage current. It also shows no adverse effects caused by N and Al incorporation at the bottom interface.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-09
Language
English
Article Type
Article
Keywords

GATE; DEPOSITION

Citation

IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621

ISSN
0741-3106
DOI
10.1109/LED.2004.834246
URI
http://hdl.handle.net/10203/85385
Appears in Collection
EE-Journal Papers(저널논문)
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