Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

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Metal-insulator-metal capacitors with atomic-layer-deposited HfO2-Al2O3 laminated and sandwiched dielectrics have been compared, for the first time, for analog circuit applications. The experimental results indicate that significant improvements can be obtained using the laminated dielectrics, including an extremely low leakage current of 1 x 10(-9) A/cm(2) at 3.3 V and 125 degreesC, a high breakdown electric field of similar to3.3 MV/cm at 125 degreesC, good polarity-independent electrical characteristics, while retaining relatively high capacitance density of 3.13 fF/mum(2) as well as voltage coefficients of capacitance as low as -80 ppm/V and 100 ppm/V-2 at 100 kHz. The underlying mechanism is likely due to alternate insertions of Al2O3 layers that reduce the thickness of each HfO2 layer, hereby efficiently inhibiting HfO2 crystallization, and blocking extensions of grain boundary channels from top to bottom as well as to achieve good interfacial quality.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-10
Language
English
Article Type
Article
Keywords

ATOMIC LAYER DEPOSITION; INSULATOR-METAL CAPACITORS; REACTION-MECHANISM; DIELECTRICS; OXIDE; FILMS

Citation

IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683

ISSN
0741-3106
DOI
10.1109/LED.2004.835791
URI
http://hdl.handle.net/10203/85359
Appears in Collection
EE-Journal Papers(저널논문)
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