Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells
Transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structures near the ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells. The high-resolution TEM micrographs and selective-area electron-diffraction patterns showed a CuPt-type ordered structure and a Cu3Au-type ordered structure near the ZnTe/ZnSe heterointerfaces in ZnxCd1-yTe/ZnSySe1-y quantum wells. The present results can help improve understanding for the appli cation of ZnxCd1-xTe/ZnSySe1-y quantum wells in optoelectronic devices in the blue-green spectral region. (C) 2001 Elsevier Science Ltd. All rights reserved.
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Issue Date
- 2001-02
- Language
- English
- Article Type
- Article
- Keywords
P-TYPE ZNSE; LASER-DIODES; INTERFACE; EPITAXY
- Citation
SOLID STATE COMMUNICATIONS, v.117, no.8, pp.501 - 504
- ISSN
- 0038-1098
- Appears in Collection
- MS-Journal Papers(저널논문)
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