Comparison of the effective oxide thickness determined by ellipsometry with the result by medium energy ion scattering spectroscopy and high-resolution transmission electron microscopy

Ellipsometric results may be inaccurate for the measured thickness of ultrathin oxide films on silicon because of the apparent refractive index changes with thickness. We have assessed this problem by comparing results on oxide thickness measured by ellipsometry with results of measurements by two independent techniques, such as medium energy ion scattering spectroscopy and high-resolution transmission electron microscopy, which should not be subject to error. The results show that appropriate ellipsometric models can provide thickness information consistent with two independent techniques, which improves the reliability of ellipsometric analysis in the nm range. (C) 2001 American Vacuum Society.
Publisher
AMER INST PHYSICS
Issue Date
2001
Language
ENG
Keywords

REFRACTIVE-INDEX; SILICON DIOXIDE; THIN SIO2-FILMS; SI; PARAMETERS; INTERFACE; LAYERS; FILMS

Citation

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.19, no.4, pp.1144 - 1149

ISSN
1071-1023
URI
http://hdl.handle.net/10203/84633
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
  • Hit : 145
  • Download : 0
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 4 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0